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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB834 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SD880 APPLICATIONS Audio frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage HAN INC Emitter-base voltage Collector current Base current SEM GE Open base Ta=25ae OND IC TOR UC VALUE -60 -60 -7 -3 -0.5 1.5 UNIT V V V A A Open collector PC Collector power dissipation TC=25ae 30 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Base-emitter on voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=-50mA ; IB=0 IC=-0.5A ; VCE=-5V IC=-3A;IB=-0.3A VCB=-60V;IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IE=0; VCB=-10V; f=1MHz IC=-0.5A ; VCE=-5V 60 20 MIN -60 2SB834 SYMBOL V(BR) CEO VBE VCEsat ICBO IEBO hFE-1 hFE-2 Cob fT TYP. MAX UNIT V -0.7 -0.5 -1.0 -1.0 -0.1 -0.1 200 V V mA mA 150 pF MHz Switching times ton ts tf Fall time Turn-on time Storage time HAN INC Y 100-200 SEM GE VCC=-30V; RL=15| IB1=-IB2=-0.2A OND IC TOR UC 0.4 1.7 0.5 9 |I |I |I s s s hFE-1 classifications O 60-120 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB834 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB834 SEM GE HAN INC OND IC TOR UC 4 |
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